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june 2016 docid029304 rev 2 1 / 12 this is information on a product in full production. www.st.com STFH13N60M2 n - channel 600 v, 0.35 typ., 11 a mdmesh? m2 power mosfet in a to - 220fp wide creepage package datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on) max i d STFH13N60M2 600 v 0.38 ? 11 a ? extremely low gate charge ? excellent output capacitance (c oss ) profile ? 100% avalanche tested ? zener - protected ? wide creepage distance of 4.25 mm between th e pins applications ? switching applications description this device is an n - channel power mosfet developed using mdmesh? m2 technology. thanks to its strip layout and an improved vertical structure, the device exhibits low on - resistance and optimized switching characteristics, rendering it suitable for the most dema nding high efficiency converters. the to - 220fp wide creepage package provides increased surface insulation for power mosfets to prevent failure due to arcing, which can occur in polluted environments. table 1: device summary order code marking package packaging STFH13N60M2 13n60m2 to - 220fp wide creepage tube am15572v1_no_tab d(2) g(1) s(3)
contents STFH13N60M2 2 / 12 docid029304 rev 2 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteri stics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 8 4 package mechanical data ................................ ............................... 9 4.1 to - 220fp wide creepage package information ................................ 9 5 revis ion history ................................ ................................ ............ 11
STFH13N60M2 electrica l ratings docid029304 rev 2 3 / 12 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v gs gate - source voltage 25 v i d drain current (continuous) at t c = 25 c 11 (1) a i d drain current (continuous) at t c = 100 c 7 (1) a i dm (2) drain current (pulsed) 44 a p tot total dissipation at t c = 25 c 25 w v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v dv/dt (3) peak diode recovery voltage slope 15 v/ns dv/dt (4) mosfet dv/dt ruggedness 50 t stg storage temperature range - 55 to 150 c t j operating junction temperature range notes: (1) limited by maximum junction temperature. (2) pulse width limited by safe operating area. (3) i sd 11 a, di/dt 400 a/s; v ds(peak < v (br)dss , v dd = 400 v (4) v ds 480 v table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case max 5 c/w r thj - amb thermal resistance junction - ambient max 62.5 c/w table 4: avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 2.8 a e as single pulse avalanche energy (starting t j = 25c, i d = i ar ; v dd = 50 v) 125 mj
electrical characteristics STFH13N60M2 4 / 12 docid029304 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5: on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage i d = 1 ma, v gs = 0 v 600 v i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v 1 a v ds = 600 v, , v gs = 0 v, t c = 125 c (1) 100 a i gss gate - body leakage current v gs = 25 v, v ds = 0 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 5.5 a 0.35 0.38 ? notes: (1) defined by design, not subject to production test. table 6: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 v - 580 - pf c oss output capacitance - 32 - pf c rss reverse transfer capacitance - 1.1 - pf c oss eq. (1) equivalent output capacitance v ds = 0 to 480 v, v gs = 0 v - 120 - pf r g intrinsic gate resistance f = 1 mhz open drain - 6.6 - ? q g total gate charge v dd = 480 v, i d = 11 a, v gs = 10 v (see figure 15: "test circuit for gate charge behavior" ) - 17 - nc q gs gate - source charge - 2.5 - nc q gd gate - drain charge - 9 - nc notes: (1) c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . table 7: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 300 v, i d = 5.5 a, r g = 4.7 ?, v gs = 10 v ( see figure 14: "test circuit for resistive load switching times" and figure 19: "switching time waveform" ) - 11 - ns t r rise time - 10 - ns t d(off) turn - off delay time - 41 - ns t f fall time - 9.5 - ns
STFH13N60M2 electrical characteristics docid029304 rev 2 5 / 12 table 8: source drain diode symbol parameter test conditions min. typ. max. unit i sd source - drain current - 11 a i sdm (1) source - drain current (pulsed) - 44 a v sd (2) forward on voltage i sd = 11 a, v gs = 0 v - 1.6 v t rr reverse recovery time i sd = 11 a, di/dt = 100 a/s, v dd = 60 v ( see figure 16: "test circuit for inductive load switching and diode recovery times" ) - 297 ns q rr reverse recovery charge - 2.8 c i rrm reverse recovery current - 18.5 a t rr reverse recovery time i sd = 11 a, di/dt = 100 a/s, v dd = 60 v, t j = 150 c, (see figure 16: "test circuit for inductive load switching and diode recovery times" ) - 394 ns q rr reverse recovery charge - 3.8 c i rrm reverse recovery current - 19 a notes: (1) pulse width limited by safe operating area. (2) pulsed: pulse duration = 300 s, duty cycle 1.5%.
electrical characteristics STFH13N60M2 6 / 12 docid029304 rev 2 2.1 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : normalized v(br)dss vs temperature figure 7 : static drain - source on - resistance w
STFH13N60M2 electrical charac teristics docid029304 rev 2 7 / 12 figure 8 : gate charge vs gate - source voltage figure 9 : capacitance variations figure 10 : normalized gate threshold voltage vs temperature figure 11 : normalized on - resistance vs temperature figure 12 : source - drain diode forward characteristics figure 13 : output capacitance stored energy v gs 6 4 2 0 0 q g (nc) (v) 8 8 4 10 v dd =480v 300 200 100 0 400 v ds 12 16 500 v ds (v) i d = 1 1a i d =17 a eoss 0 v ds (v) (j) 200 100 500 0 1 2 3 4 300 400 am15721v1 c 10 1 0.1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 100 1000 am15717v1
test circuits STFH13N60M2 8 / 12 docid029304 rev 2 3 test circuits figure 14 : test circuit for resistive load switching times figure 15 : test circuit for gate charge behavior figure 16 : test circuit for inductive load switching and diode recovery times figure 17 : unclamped inductive load test circuit figure 18 : unclamped inductive waveform figure 19 : switching time waveform
STFH13N60M2 package mechanical data docid029304 rev 2 9 / 12 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are availabl e at: www.st.com . ecopack ? is an st trademark. 4.1 to - 220fp wide creepage package information figure 20 : to - 220fp wide creepage package outline dm00260252_1
package mechanical data STFH13N60M2 10 / 12 docid029304 rev 2 table 9: to - 220fp wide creepage package mechanical data dim. mm min. typ. max. a 4.60 4.70 4.80 b 2.50 2.60 2.70 d 2.49 2.59 2.69 e 0.46 0.59 f 0.76 0.89 f1 0.96 1.25 f2 1.11 1.40 g 8.40 8.50 8.60 g1 4.15 4.25 4.35 h 10.90 11.00 11.10 l2 15.25 15.40 15.55 l3 28.70 29.00 29.30 l4 10.00 10.20 10.40 l5 2.55 2.70 2.85 l6 16.00 16.10 16.20 l7 9.05 9.15 9.25 dia 3.00 3.10 3.20
STFH13N60M2 revision history docid029304 rev 2 11 / 12 5 revision history table 10: document revision history date revision changes 12 - may - 2016 1 initial release 10 - jun - 2016 2 document status promoted from preliminary to production data.
STFH13N60M2 12 / 12 docid029304 rev 2 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and s t assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information se t forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2016 stmicroelectronics C all rights reserved

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